G7S313UPBF irg7s313upbf equivalent, irg7s313upbf.
l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved pan.
TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l.
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are.
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